We have studied chemical bath-deposited CdSe thin films on GaAs substrates. The films deposited on GaAs(100) showed a (001) textured polycrystalline zinc blende CdSe layer at the interface. On top of this layer, a stable form of wurtzite CdSe was obtained, where the CdSe grew in highly defective columnar crystals. The defects were mostly stacking faults, which have been well documented in the literature for CdSe due to polytypism. Deposition on GaAs(111)A and GaAs(111)B resulted in monocrystalline films of wurtzite CdSe with their c-axis oriented perpendicularly to the substrate surface. The effects of the pH value, growth time and temperature deposition parameters were investigated. At an optimal pH value of 12.3, a linear growth rate was observed as a function of growth time. Arrhenius plots provided the activation energies associated with chemical bath deposition of CdSe on GaAs. The lowest activation energy for CdSe film formation was obtained on GaAs(111)B as compared to growth on GaAs(100) and GaAs(111)A substrates.

中文翻译：

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CdSe在GaAs上的化学外延

我们已经研究了在GaAs衬底上化学浴沉积的CdSe薄膜。沉积在GaAs（100）上的薄膜在界面处显示（001）织构化的多晶锌共混物CdSe层。在该层的顶部，获得了稳定的纤锌矿型CdSe形式，其中CdSe以高度缺陷的柱状晶体生长。缺陷主要是堆垛层错，由于多型性，在CdSe的文献中已对此进行了充分的记录。在GaAs（111）A和GaAs（111）B上沉积会形成纤锌矿CdSe单晶膜，其c轴垂直于基板表面定向。研究了pH值，生长时间和温度沉积参数的影响。在最佳pH值为12.3时，观察到线性生长速率与生长时间的关系。Arrhenius曲线提供了与Gad上CdSe的化学浴沉积相关的活化能。与在GaAs（100）和GaAs（111）A衬底上生长相比，在GaAs（111）B上获得最低的CdSe膜形成活化能。