Modification of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with sodium-poly(styrenesulfonate) leads to a ca. 0.3 eV increase in the work function and 15 times enhancement in the photoluminescence intensity of the overlying perovskite layer, which is closely correlated with the formation of a highly PSS-enriched top layer. As a direct result, the hybrid halide perovskite light-emitting devices with a modified PEDOT:PSS layer show the maximum external quantum efficiency of 7.2% and power efficiency of 19.0 lm W^–1, which are 14–20 times those of the analogous devices using a pristine PEDOT:PSS layer and among the best reported values for the light-emitting devices using a neat perovskite emission layer. Our results illustrate that insufficient hole injection and luminescence quenching at the PEDOT:PSS anode are among the most important factors limiting the external quantum efficiencies of inverted perovskite light-emitting devices.

中文翻译：

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用于高效钙钛矿发光器件的改性导电聚合物空穴注入层：增强的空穴注入和减少的发光猝灭

用聚（苯乙烯磺酸钠）对聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）的改性导致 功函数增加0.3 eV，上覆钙钛矿层的光致发光强度提高15倍，这与高度PSS富集的顶层的形成密切相关。直接的结果是，具有改良的PEDOT：PSS层的混合卤化物钙钛矿发光器件的最大外部量子效率为7.2％，功率效率为19.0 lm W ^–1，这是使用原始PEDOT：PSS层的类似器件的14–20倍，并且是使用纯钙钛矿发射层的发光器件的最佳报告值。我们的结果表明，PEDOT：PSS阳极处的空穴注入不足和发光淬灭是限制倒置钙钛矿发光器件的外部量子效率的最重要因素。