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Boosting surface charge-transfer doping efficiency and robustness of diamond with WO3 and ReO3
Applied Physics Letters ( IF 4 ) Pub Date : 2017-09-11 , DOI: 10.1063/1.4986339
Moshe Tordjman 1 , Kamira Weinfeld 1 , Rafi Kalish 1, 2
Affiliation  

An advanced charge-transfer yield is demonstrated by employing single monolayers of transition-metal oxides—tungsten trioxide (WO3) and rhenium trioxide (ReO3)—deposited on the hydrogenated diamond surface, resulting in improved p-type sheet conductivity and thermal stability. Surface conductivities, as determined by Hall effect measurements as a function of temperature for WO3, yield a record sheet hole carrier concentration value of up to 2.52 × 1014 cm−2 at room temperature for only a few monolayers of coverage. Transfer doping with ReO3 exhibits a consistent narrow sheet carrier concentration value of around 3 × 1013 cm−2, exhibiting a thermal stability of up to 450 °C. This enhanced conductivity and temperature robustness exceed those reported for previously exposed surface electron acceptor materials used so far on a diamond surface. X-ray photoelectron spectroscopy measurements of the C1s core level shift as a function of WO3 and ReO3 layer thicknesses are used to determine the respective increase ...

中文翻译:

用 WO3 和 ReO3 提高金刚石的表面电荷转移掺杂效率和稳健性

通过在氢化金刚石表面沉积单层过渡金属氧化物——三氧化钨 (WO3) 和三氧化铼 (ReO3),证明了先进的电荷转移率,从而提高了 p 型片的导电性和热稳定性。由霍尔效应测量确定的表面电导率作为 WO3 的温度函数,在室温下仅对几个单层覆盖产生高达 2.52 × 1014 cm-2 的记录片空穴载流子浓度值。用 ReO3 转移掺杂表现出一致的窄片载流子浓度值约为 3 × 1013 cm-2,表现出高达 450 °C 的热稳定性。这种增强的导电性和温度稳定性超过了迄今为止在金刚石表面上使用的先前暴露的表面电子受体材料所报道的那些。
更新日期:2017-09-11
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