We report all solution-processed manufacture of high performance top-emitting (TE) quantum dot light-emitting diodes (QLEDs) with an aluminum (Al) film as bottom electrode and a homogeneous molybdenum oxide (MoO₃) film as hole injection layer deposited on top of Al from water solution. With an optimal organic light outcoupling layer over the top electrode to depress the multiple light beam interference effect, the QLEDs show a maximum luminance and current efficiency of 151000 cd m⁻² and 33.7 cd A⁻¹, respectively, attaining a nearly Lambertian light source. Especially, they exhibit a maximum external quantum efficiency of 7.4%. All solution-processed fabrication of these TE QLEDs is further implemented on some active light display samples of Arabic numerals with 15 × 15 mm² active area. The resulting simple passive matrix quantum dot light emitting displays possess excellent photoelectric characteristics, which represents a step toward practical application.

中文翻译：

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具有所有溶液处理功能层的高性能顶部发光量子点发光二极管

我们报告了以铝（Al）膜作为底电极和均匀的氧化钼（MoO ₃）膜作为空穴注入层沉积的高性能顶部发射（TE）量子点发光二极管（QLED）的所有溶液处理制造在水溶液中的铝上。借助顶部电极上方的最佳有机光输出耦合层来抑制多重光束干扰效应，这些QLED的最大亮度和电流效率分别为151 000 cd m ^-2和33.7 cd A ^-1分别获得近乎朗伯的光源。特别是，它们表现出的最大外部量子效率为7.4％。这些TE QLED的所有溶液处理制造都在具有15×15 mm ²有源面积的阿拉伯数字的一些有源光显示样品上实现。所得的简单的无源矩阵量子点发光显示器具有优异的光电特性，这代表了向实际应用的一步。