The development of ion-assisted aerosol lithography (IAAL) has enabled fabrication of complex three-dimensional nanoparticle (NP) structures on conducting substrates. In this work, the applicability of the IAAL technique was investigated on non-conducting substrates. The NP structure growth process on a non-conducting substrate was found to self-terminate and the structures subsequently repel incoming charged NPs and scatter them away. Electric field calculations supported the experimental findings and confirmed that the electric field distortions owing to charge build-up within the structures prevented additional NP deposition thereon. To regulate the charge build-up without compromising the number of NPs available for assembly, a corona discharger and an ion trap were implemented. By varying the number of ions available in the assembly process, an optimum level of ion injection was found that allowed for a prolonged (>120 min) assembly of NP structures on non-conducting substrates without the unwanted scattering of NPs.

离子辅助气溶胶光刻技术（IAAL）的发展使得能够在导电基底上制造复杂的三维纳米粒子（NP）结构。在这项工作中，研究了IAAL技术在非导电基板上的适用性。发现在非导电衬底上的NP结构生长过程会自行终止，并且该结构随后排斥进入的带电NP并将其散射开。电场计算支持了实验结果，并确认了由于电荷在结构内积累而引起的电场畸变阻止了其上进一步的NP沉积。为了调节电荷积累而不损害可用于组装的NP数量，实施了电晕放电器和离子阱。通过改变组装过程中可用的离子数量，