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Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode
Organic Electronics ( IF 3.2 ) Pub Date : 2017-08-12 , DOI: 10.1016/j.orgel.2017.08.011
Luiz G.S. Albano , Miguel H. Boratto , Oswaldo Nunes-Neto , Carlos F.O. Graeff

We report on low voltage and high frequency vertical organic field-effect transistors (VOFETs) using silver nanowires (AgNWs) as intermediate grid electrode (source) deposited through Mayer rod-coating. The optimized AgNWs electrodes deposited on insulator surface followed by low thermal annealing have sheet resistance of ∼30 Ω/sq and surface roughness of 70 ± 20 nm. Crosslinked poly(vinyl alcohol) is used as gate insulator and C60 fullerene as n-type channel semiconductor. Our VOFETs have high output current density of 2.5 mA/cm2 and on/off ratio of 5 × 103 with supply voltages up to 2 V. A fast switching performance of sub-1 μs at frequency gate modulation of 0.13 MHz is demonstrated. Moreover, our devices are produced based on low-cost methods compatible with industrial-scale production of organic electronics.



中文翻译:

基于棒涂银纳米线栅电极的低压高频垂直有机场效应晶体管

我们报告了使用银纳米线(AgNWs)作为通过Mayer棒式涂层沉积的中间栅极(源)的低压和高频垂直有机场效应晶体管(VOFET)。经过优化的沉积在绝缘体表面的AgNWs电极,然后进行低热退火,其薄层电阻约为30Ω/ sq,表面粗糙度为70±20 nm。交联聚乙烯醇用作栅极绝缘体,C 60富勒烯用作n型沟道半导体。我们的VOFET具有2.5 mA / cm 2的高输出电流密度和5×10 3的开/关比具有高达2 V的电源电压。在0.13 MHz的频率门调制下,演示了低于1μs的快速开关性能。此外,我们的设备是基于与工业规模生产有机电子产品兼容的低成本方法生产的。

更新日期:2017-08-12
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