Abstract A GaSe: Al (0.13 wt%) single crystal was grown using the Bridgman method combined with a crucible rotation technique. A 35 × 19×5.5 mm 3 sample was cut from the as-grown crystal ingot. The GaSe: Al (0.13 wt%) crystal has an indentation hardness of 2.27 GPa, which is 2.6 times harder than the pure GaSe crystal. In particular, a sample with a thickness of 5.5 mm has an infrared transmission of approximately 60%. The absorption coefficient of this sample is as low as 0.1 cm −1 over the range of 0.83 to −14 μm, which demonstrates its high optical quality. A crystal growth method with the described procedures may be suitable to grow other doped GaSe crystals.

中文翻译：

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掺铝 GaSe 晶体的生长和表征

摘要 使用布里奇曼方法结合坩埚旋转技术生长了 GaSe:Al (0.13 wt%) 单晶。从生长的晶锭上切下一个 35 × 19 × 5.5 mm 3 的样品。GaSe：Al (0.13 wt%) 晶体的压痕硬度为 2.27 GPa，是纯 GaSe 晶体的 2.6 倍。特别是，厚度为 5.5 毫米的样品具有大约 60% 的红外透射率。该样品的吸收系数在 0.83 至 -14 μm 范围内低至 0.1 cm -1，这表明其具有很高的光学质量。具有所述程序的晶体生长方法可能适用于生长其他掺杂的 GaSe 晶体。