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Growth of homogeneous Nd:LGGG single crystal plates by edge-defined film-fed growth method
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2017-11-01 , DOI: 10.1016/j.jcrysgro.2017.08.007 Wenxiang Mu , Zhitai Jia , Yanru Yin , Qiangqiang Hu , Yang Li , Xutang Tao
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2017-11-01 , DOI: 10.1016/j.jcrysgro.2017.08.007 Wenxiang Mu , Zhitai Jia , Yanru Yin , Qiangqiang Hu , Yang Li , Xutang Tao
Abstract Device-size Nd3+:(LuxGd1−x)3Ga5O12 (Nd:LGGG) single crystal plates have been grown by edge-defined film-fed growth (EFG) method for the first time. The problems encountered during the crystal growth have been discussed and solved, resulting in a single crystal plate with a length of 180 mm. In particular, the evaporation loss of Ga2O3 composition during the crystal growing has been depressed efficiently by using an Ir lid. The crystal perfection was confirmed by X-ray rocking curve with a FWHM of the 32 arcsec, meaning a high crystalline quality. It was very interesting to find that the distribution of Nd3+ in the crystal grown by EFG method was more homogeneous than that in Cz method, benefitting from the larger segregation coefficient of Nd3+ in EFG method. The thermal conductivity was measured to be 8.1 W m−1 K−1 at room temperature. All the properties showed that the Nd:LGGG crystal plates grown by EFG method were promising for high power laser application.
中文翻译:
均质 Nd:LGGG 单晶板的边缘限定薄膜生长法生长
摘要 器件尺寸 Nd3+:(LuxGd1−x)3Ga5O12 (Nd:LGGG) 单晶板首次采用边缘限定薄膜生长 (EFG) 方法生长。对晶体生长过程中遇到的问题进行了讨论和解决,得到了长度为180mm的单晶板。特别是,通过使用 Ir 盖有效地抑制了晶体生长过程中 Ga2O3 成分的蒸发损失。X 射线摇摆曲线证实了晶体的完美性,FWHM 为 32 弧秒,这意味着高结晶质量。有趣的是,EFG 法生长的晶体中 Nd3+ 的分布比 Cz 法更均匀,这得益于 EFG 法中 Nd3+ 更大的偏析系数。在室温下测得的热导率为 8.1 W m-1 K-1。
更新日期:2017-11-01
中文翻译:
均质 Nd:LGGG 单晶板的边缘限定薄膜生长法生长
摘要 器件尺寸 Nd3+:(LuxGd1−x)3Ga5O12 (Nd:LGGG) 单晶板首次采用边缘限定薄膜生长 (EFG) 方法生长。对晶体生长过程中遇到的问题进行了讨论和解决,得到了长度为180mm的单晶板。特别是,通过使用 Ir 盖有效地抑制了晶体生长过程中 Ga2O3 成分的蒸发损失。X 射线摇摆曲线证实了晶体的完美性,FWHM 为 32 弧秒,这意味着高结晶质量。有趣的是,EFG 法生长的晶体中 Nd3+ 的分布比 Cz 法更均匀,这得益于 EFG 法中 Nd3+ 更大的偏析系数。在室温下测得的热导率为 8.1 W m-1 K-1。