Abstract Quantum dashes were synthesized in the molecular beam epitaxial growth of InAs on GaAs(2 2 1). By changing the arsenic pressure it was possible to obtain highly ordered one-dimensional InAs arrays as demonstrated by autocorrelation function analysis. Polarized Raman spectroscopy was utilized in order to characterize the samples and to estimate the stress at the InAs/GaAs interface as well as the surface anisotropy imposed by the quasi one-dimensional character of the quantum dashes. The most ordered surface, showed the lowest correlation length, and for this sample the Raman spectra exhibits small shift of the GaAs resonance modes indicating likewise small GaAs tensile strain.

中文翻译：

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通过拉曼光谱研究 InAs/GaAs(2 2 1) 量子线中的应变和各向异性效应

摘要 在GaAs(2 2 1)上InAs分子束外延生长过程中合成了量子线。通过改变砷压力，可以获得高度有序的一维 InAs 阵列，如自相关函数分析所示。偏振拉曼光谱用于表征样品并估计 InAs/GaAs 界面处的应力以及由量子破折号的准一维特征强加的表面各向异性。最有序的表面显示出最低的相关长度，对于这个样品，拉曼光谱表现出 GaAs 共振模​​式的小偏移，表明同样小的 GaAs 拉伸应变。