Abstract Room-temperature photoluminescence intensity from Germanium (Ge) quantum dots (QDs) is highly enhanced by the Phosphorous (P) δ -doping at Ge QDs/Si interfaces since stronger confinements of electrons at the interfaces can be realized by the doping. Suppression of surface segregation of the doped P atoms, which is essential for the δ -doping with a sharp profile, is realized by the control of growth temperatures of Ge QDs and spacer-Si layers after P doping. It is, therefore, concluded that higher efficiency light emitting devices can be realized based on Ge QDs with optimal n-type doping and growth conditions.

中文翻译：

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具有磷 δ 掺杂的相邻限制结构的 Ge 量子点的发光增强

摘要 Ge QDs/Si 界面处的磷 (P) δ 掺杂大大增强了锗 (Ge) 量子点 (QD) 的室温光致发光强度，因为掺杂可以在界面处实现更强的电子限制。抑制掺杂的 P 原子的表面偏析，这对于具有尖锐轮廓的 δ 掺杂至关重要，是通过控制 P 掺杂后 Ge QD 和间隔硅层的生长温度来实现的。因此，可以得出结论，基于具有最佳 n 型掺杂和生长条件的 Ge QD，可以实现更高效率的发光器件。