Abstract InP- and GaAs-based metamorphic In 0.83 Ga 0.17 As photodetectors were grown and investigated. Compared to InP-based photodetector, the dark current of GaAs-based photodetector at room temperature increased 2–3 times but still comparable, whereas at 77 K the dark current increased 2–3 orders. The deep-level transient spectroscopy results reveal that a deep level trap state exists in the GaAs-based photodetector structure. The higher dark current in GaAs-based photodetector at low temperature was mainly ascribed to a deep level trap induced tunneling current. The deep trap centers can also induce non-radiative recombination with smaller thermal active energy in the GaAs-based photodetector structure.

中文翻译：

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分析 InP 和 GaAs 基 In 0.83 Ga 0.17 As 光电探测器中的暗电流和深能级陷阱

摘要 生长并研究了 InP 和 GaAs 基变质 In 0.83 Ga 0.17 As 光电探测器。与基于 InP 的光电探测器相比，基于 GaAs 的光电探测器在室温下的暗电流增加了 2-3 倍，但仍然相当，而在 77 K 时，暗电流增加了 2-3 个数量级。深能级瞬态光谱结果表明，GaAs 基光电探测器结构中存在深能级陷阱态。GaAs 基光电探测器在低温下较高的暗电流主要归因于深能级陷阱感应隧道电流。深陷阱中心还可以在基于 GaAs 的光电探测器结构中以较小的热活性能量诱导非辐射复合。