Abstract High quality Y 2 O 3 on GaSb was achieved using both molecular beam epitaxy (MBE) and atomic layer deposition (ALD) with interfacial characteristics studied by in-situ X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor (MOS) electrical measurements. Ga-oxide and stoichiometric Sb-oxides were obtained in the MBE-Y 2 O 3 /GaSb and non-stoichiometric Sb 2 Ox (x 2 O 3 /GaSb according to the XPS spectra. From the capacitance-voltage (CV) measurements, MBE-Y 2 O 3 provides lower interfacial trap density (D it ) grown at elevated temperature of 200°C, while ALD-grown Y 2 O 3 shows smaller hysteresis and higher dielectric constant.

中文翻译：

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分子束外延和原子层沉积生长的Y 2 O 3 /GaSb(001)的界面特性

摘要 使用分子束外延 (MBE) 和原子层沉积 (ALD) 在 GaSb 上获得高质量的 Y 2 O 3 ，并通过原位 X 射线光电子能谱 (XPS) 和金属氧化物半导体 (MOS) 研究了界面特性。 ) 电气测量。Ga 氧化物和化学计量 Sb 氧化物在 MBE-Y 2 O 3 /GaSb 和非化学计量 Sb 2 Ox (x 2 O 3 /GaSb 根据 XPS 光谱。从电容电压 (CV) 测量中获得， MBE-Y 2 O 3 提供了在 200°C 高温下生长的较低界面陷阱密度 (D it )，而 ALD 生长的 Y 2 O 3 显示出较小的滞后和较高的介电常数。