Abstract Hybrid nanostructures are known to elicit an enhanced optical response. We study the directed alignment of ErAs metal nanoparticle (NP) and InAs quantum dot (QD) using molecular beam eptaxy (MBE) in a GaAs matrix. Due to high surface free energy caused by the crystal structure difference, overgrowth of an ErAs NP with GaAs forms a depression that condenses subsequent InAs adatoms to form an inverted QD self-aligned to the underlying ErAs NP. The ErAs NP growth, GaAs overgrowth, and InAs QD deposition were carefully controlled and studied with transmission electron microscopy (TEM) and atomic force microscopy (AFM) to investigate their effects on the QD-NP alignment.

中文翻译：

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使用分子束外延在 GaAs (0 0 1) 上的 ErAs 半金属纳米粒子上堆叠 InAs 量子点

摘要 已知混合纳米结构会引起增强的光学响应。我们使用分子束外延 (MBE) 在 GaAs 基质中研究 ErAs 金属纳米粒子 (NP) 和 InAs 量子点 (QD) 的定向排列。由于晶体结构差异引起的高表面自由能，带有 GaAs 的 ErAs NP 的过度生长形成了一个凹陷，该凹陷会冷凝后续的 InAs 吸附原子，形成与下面的 ErAs NP 自对准的倒置 QD。使用透射电子显微镜 (TEM) 和原子力显微镜 (AFM) 仔细控制和研究 ErAs NP 生长、GaAs 过度生长和 InAs QD 沉积，以研究它们对 QD-NP 排列的影响。