A bismuth@porous silicon (Bi/PSi) nanostructure is fabricated and used as a new highly sensitive electrochemical sensor for measurement of thioridazine. For this purpose, commercial silicon powder is converted to porous silicon using metal-assisted chemical etching method. Then, bismuth nanoparticles are deposited on the surface of the porous silicon that synthesized in the previous step. The effects of pH and instrumental parameters are studied on the sensor response. After optimization of the parameters, differential pulse voltammetry is used to determine sub-micro molar amounts of thioridazine. The Linear region of the electrochemical sensor is in the range of 0.1 to 260 μmol L−1 thioridazine with a detection limit of 0.03 μmol L−1, when Bi/PSi/CNTPE is used as an electrochemical sensor. The precision and accuracy of the sensor is evaluated. The Bi/PSi/CNTPE is used as an appropriated tool for accurate measurement of low amounts of thioridazine in real samples with satisfactory results.

中文翻译：

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铋纳米颗粒@多孔硅纳米结构，作为选择性和灵敏电化学传感器测定硫利达嗪的应用

铋@多孔硅（Bi/PSi）纳米结构被制造并用作一种新的高灵敏度电化学传感器，用于测量硫利达嗪。为此，使用金属辅助化学蚀刻方法将商业硅粉转化为多孔硅。然后，铋纳米颗粒沉积在上一步合成的多孔硅表面。研究了 pH 值和仪器参数对传感器响应的影响。参数优化后，差分脉冲伏安法用于确定亚微摩尔量的硫利达嗪。当 Bi/PSi/CNTPE 用作电化学传感器时，电化学传感器的线性区域在 0.1 至 260 μmol L-1 硫利达嗪的范围内，检测限为 0.03 μmol L-1。评估传感器的精度和准确度。