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An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor
Nano Letters ( IF 10.8 ) Pub Date : 2017-09-13 00:00:00 , DOI: 10.1021/acs.nanolett.7b02947
Reza M. Moghadam 1 , Zhiyong Xiao 2 , Kamyar Ahmadi-Majlan 1 , Everett D. Grimley 3 , Mark Bowden 4 , Phuong-Vu Ong 5 , Scott A. Chambers 5 , James M. Lebeau 3 , Xia Hong 2 , Peter V. Sushko 5 , Joseph H. Ngai 1
Affiliation  

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, the integration of gate materials that enable nonvolatile or hysteretic functionality in field-effect transistors could lead to device technologies that consume less power or allow for novel modalities in computing. Here we present electrical characterization of ultrathin single crystalline SrZrxTi1–xO3 (x = 0.7) films epitaxially grown on a high mobility semiconductor, Ge. Epitaxial films of SrZrxTi1–xO3 exhibit relaxor behavior, characterized by a hysteretic polarization that can modulate the surface potential of Ge. We find that gate layers as thin as 5 nm corresponding to an equivalent-oxide thickness of just 1.0 nm exhibit a ∼2 V hysteretic window in the capacitance–voltage characteristics. The development of hysteretic metal–oxide–semiconductor capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.

中文翻译:

集成在高迁移率半导体上的超薄单晶弛豫铁电体

半导体上多功能氧化物的外延生长为将新功能引入半导体器件技术开辟了道路。特别是,在场效应晶体管中实现非易失性或迟滞功能的栅极材料的集成可能会导致器件技术消耗更少的功率或允许使用新颖的计算方式。在这里,我们介绍了在高迁移率半导体Ge上外延生长的超薄单晶SrZr x Ti 1– x O 3x = 0.7)薄膜的电学特性。SrZr x Ti 1– x O 3的外延膜表现出弛豫行为,其特征在于可以调节Ge表面电势的磁滞极化。我们发现,厚度仅为5 nm的栅极层(相当于1.0 nm的等效氧化物厚度)在电容-电压特性中显示出约2 V的磁滞窗口。具有纳米级栅极厚度的磁滞金属氧化物半导体电容器的开发为纳米电子器件开辟了新的前景。
更新日期:2017-09-13
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