In this paper, we report our study on high-performance III-nitride nanowire light-emitting diodes (LEDs) on copper (Cu) substrates via the substrate-transfer process. Nanowire LED structures were first grown on silicon-on-insulator (SOI) substrates by molecular beam epitaxy. Subsequently, the SOI substrate was removed by combining dry- and wet-etching processes. Compared to conventional nanowire LEDs on Si, the nanowire LEDs on Cu exhibit several advantages, including more efficient thermal management and enhanced light-extraction efficiency (LEE) because of the usage of metal reflectors and highly thermally conductive metal substrates. The LED on Cu, therefore, has stronger photoluminescence, electroluminescence intensities, and better current–voltage characteristics compared to the conventional nanowire LED on Si. Our simulation results further confirm the improved device performance of LEDs on Cu, compared to LEDs on Si. The LEE of the nanowire LED on Cu is nine times higher than that of the LED on Si at the same nanowire radius of 60 nm and spacing of 130 nm. Moreover, by engineering the device-active region, we achieved high-brightness phosphor-free LEDs on Cu with highly stable white-light emission and high color-rendering index of ∼95, showing their promising applications in general lighting, flexible displays, and wearable applications.

中文翻译：

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用于柔性光子学的金属基板上无磷III族氮化物纳米线发光二极管的制备

在本文中，我们报告了我们通过衬底转移过程对铜（Cu）衬底上的高性能III氮化物纳米线发光二极管（LED）的研究。纳米线LED结构首先通过分子束外延生长在绝缘体上硅（SOI）衬底上。随后，通过组合干法蚀刻和湿法蚀刻工艺来去除SOI基板。与在Si上的常规纳米线LED相比，在Cu上的纳米线LED具有多个优点，包括由于使用了金属反射器和高导热性的金属基板，因此具有更有效的热管理和更高的光提取效率（LEE）。因此，与传统的Si上的纳米线LED相比，Cu上的LED具有更强的光致发光，电致发光强度以及更好的电流-电压特性。我们的仿真结果进一步证实，与Si上的LED相比，Cu上的LED的器件性能有所改善。在相同的纳米线半径为60 nm和间距为130 nm的情况下，Cu上的纳米线LED的LEE值比Si上的LED的LEEE高出九倍。此外，通过对器件有源区域进行工程设计，我们在铜上实现了高亮度无磷LED，具有高稳定的白光发射和高达约95的显色指数，显示了它们在一般照明，柔性显示器和液晶显示器中的广阔应用前景。可穿戴应用。