InSe, In2Se3, and GaSe are important III-VI semiconductors and are attractive for electronic, optical, and optoelectronic applications. This paper reports a fast and cheap way called combustion synthesis to prepare InSe, In2Se3, and GaSe. Bulk samples with relative densities up to 98% are directly produced in a few seconds. The samples show a high phase purity, correct stoichiometry, and lamellar crystals larger than 100 μm. By optical absorption, the bandgaps of InSe, In2Se3, and GaSe are determined to be 1.08, 1.24 and 1.75 eV, respectively.

中文翻译：

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InSe、In2 Se3 和 GaSe 的燃烧合成

InSe、In2Se3 和 GaSe 是重要的 III-VI 族半导体，对电子、光学和光电应用具有吸引力。本文报道了一种称为燃烧合成的快速且廉价的方法来制备 InSe、In2Se3 和 GaSe。在几秒钟内直接生产相对密度高达 98% 的大块样品。样品显示出高相纯度、正确的化学计量和大于 100 μm 的层状晶体。通过光吸收，InSe、In2Se3 和 GaSe 的带隙分别确定为 1.08、1.24 和 1.75 eV。