We demonstrate a new route toward the integration and deterministic placement of quantum dots (QDs) within prepatterned nanostructures. Using standard electron-beam lithography (EBL) and inductively coupled plasma reactive-ion etching (ICP-RIE), we fabricate arrays of nanowires on a III-nitride platform. Next, we integrate QDs of controlled size within the prepatterned nanowires using a bandgap-selective, wet-etching technique: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. Low-temperature microphotoluminescence (μ-PL) measurements of individual nanowires reveal sharp spectral signatures, indicative of QD formation. Further, internal quantum efficiency (IQE) measurements reveal a near order of magnitude improvement in emitter efficiency following QSC-PEC etching. Finally, second-order cross-correlation (g(²)(0)) measurements of individual QDs directly confirm nonclassical, antibunching behavior. Our results illustrate an exciting approach toward the top-down integration of nonclassical light sources within nanophotonic platforms.

中文翻译：

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用于无缝自上而下集成的量子尺寸控制量子点的确定性放置

我们展示了一条新的路线，可以将量子点（QD）集成和确定性地放置在预先形成图案的纳米结构中。使用标准电子束光刻（EBL）和电感耦合等离子体反应离子刻蚀（ICP-RIE），我们在III型氮化物平台上制造了纳米线阵列。接下来，我们使用能带隙选择湿法刻蚀技术将可控制尺寸的量子点集成到预先形成图案的纳米线中：量子尺寸可控的光电化学（QSC-PEC）刻蚀。各个纳米线的低温微光致发光（μ-PL）测量显示出清晰的光谱特征，表明了QD的形成。此外，内部量子效率（IQE）测量揭示了QSC-PEC蚀刻后，发射极效率提高了近一个数量级。最后，二阶互相关（g（²）（0））对单个QD的测量直接证实了非经典的反起泡行为。我们的结果说明了一种在纳米光子平台内自上而下整合非经典光源的令人兴奋的方法。