The piezo-phototronic effect is the tuning of piezoelectric polarization charges at the interface to largely enhance the efficiency of optoelectronic processes related to carrier separation or recombination. Here, we demonstrated the enhanced short-circuit current density and the conversion efficiency of InGaN/GaN multiple quantum well solar cells with an external stress applied on the device. The external-stress-induced piezoelectric charges generated at the interfaces of InGaN and GaN compensate the piezoelectric charges induced by lattice mismatch stress in the InGaN wells. The energy band realignment is calculated with a self-consistent numerical model to clarify the enhancement mechanism of optical-generated carriers. This research not only theoretically and experimentally proves the piezo-phototronic effect modulated the quantum photovoltaic device but also provides a great promise to maximize the use of solar energy in the current energy revolution.

中文翻译：

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压电效应增强了InGaN / GaN多量子阱的太阳能电池转换效率

压电效应是调整界面上的压电极化电荷，以大大提高与载流子分离或重组有关的光电过程的效率。在这里，我们展示了在器件上施加了外部应力的情况下，InGaN / GaN多量子阱太阳能电池的短路电流密度提高了，转换效率更高。在InGaN和GaN的界面处产生的外部应力感应的压电电荷补偿了InGaN阱中晶格失配应力引起的压电电荷。利用自洽数值模型计算能带重排，以阐明光生载流子的增强机制。