To reduce power consumption of transparent oxide‐semiconductor thin film transistors, a gate dielectric material with high dielectric constant and low leakage current density is favorable. According to previous study, the bulk TiNb₂O₇ with outstanding dielectric properties may have an interest in its thin‐film form. The optical, chemical states and surface morphology of sol‐gel derived TiNb₂O₇ (TNO) thin films are investigated the effect of postannealing temperature lower than 500°C, which is crucial to the glass transition temperature. All films possess a transmittance near 80% in the visible region. The existence of non‐lattice oxygen in the TNO film is proposed. The peak area ratio of non‐lattice oxygen plays an important role in the control of leakage current density of MIM capacitors. Also, the capacitance density and dissipation factor were affected by the indium tin oxide (ITO) sheet resistance at high frequencies. The sample after postannealing at 300°C and electrode‐annealing at 150°C possesses a high dielectric constant (>30 at 1 MHz) and a low leakage current density (<1 × 10⁻⁶ A/cm² at 1 V), which makes it a very promising gate dielectric material for transparent oxide‐semiconductor thin film transistors.

中文翻译：

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溶胶凝胶衍生的用于透明电子应用的TiNb2O7介电薄膜

为了降低透明氧化物半导体薄膜晶体管的功耗，采用介电常数高且漏电流密度低的栅介电材料是有利的。根据先前的研究，具有出色介电性能的块状TiNb ₂ O ₇可能对其薄膜形式感兴趣。溶胶凝胶衍生的TiNb ₂ O ₇的光学，化学状态和表面形态研究了（TNO）薄膜对低于500°C的退火温度的影响，这对玻璃化转变温度至关重要。所有薄膜在可见光区域的透射率均接近80％。提出了在TNO膜中存在非晶格氧。非晶格氧的峰面积比在控制MIM电容器的泄漏电流密度中起着重要作用。而且，电容密度和耗散因数受高频下的铟锡氧化物（ITO）薄层电阻影响。300°C后退火和150°C电极退火后的样品具有较高的介电常数（在1 MHz时> 30）和较低的漏电流密度（<1×10 ^-6  A / cm ² （在1 V时），这使其成为用于透明氧化物半导体薄膜晶体管的非常有前途的栅极介电材料。