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Properties of perovskite ferroelectrics deposited on F doped SnO 2 electrodes and the prospect of their integration into perovskite solar cells
Materials & Design ( IF 8.4 ) Pub Date : 2017-12-01 , DOI: 10.1016/j.matdes.2017.09.013
I. Pintilie , V. Stancu , A. Tomulescu , R. Radu , C. Besleaga Stan , L. Trinca , L. Pintilie

Abstract The integration of ferroelectrics in perovskite solar cells is proposed as possible way to enhance charge collection efficiency. First results on solar cell manufactured with PbTiO 3 (PTO) instead of TiO 2 have shown negligible values for the power conversion efficiency (PCE). This is explained by the high serial resistance of sol-gel deposited PTO on F:SnO 2 electrodes (FTO). Although PTO layer has remnant polarization of 22 μC/cm 2 , the high potential barrier (0.25 ± 0.05 eV) at the FTO/PTO interface and low carrier mobility (10 − 8 cm 2 V − 1 s − 1 ) compared to TiO 2 leads to high serial resistance. Better results were obtained with thinner PTO layers grown by pulsed laser deposition, with PCE values up to 0.6%. Further enhancement was obtained by replacing PTO with BaTiO 3 (BTO), with PCE value reaching about 0.8% after poling the cell with + 3 V. The most important finding was that the magnitude of the short circuit current increases with the amplitude of the poling voltage while the value of the open-circuit voltage remains about the same, around 0.9 V. This is explained through more efficient collection of the charges generated under illumination in the absorber layer due to the polarization that is present in the ferroelectric film.

中文翻译:

沉积在 F 掺杂 SnO 2 电极上的钙钛矿铁电体的性质及其集成到钙钛矿太阳能电池中的前景

摘要 铁电体在钙钛矿太阳能电池中的集成被认为是提高电荷收集效率的可能途径。用 PbTiO 3 (PTO) 代替 TiO 2 制造的太阳能电池的初步结果表明,其功率转换效率 (PCE) 值可以忽略不计。这可以通过溶胶-凝胶沉积 PTO 在 F:SnO 2 电极 (FTO) 上的高串联电阻来解释。尽管 PTO 层具有 22 μC/cm 2 的残余极化,但与 TiO 2 相比,FTO/PTO 界面处的高势垒 (0.25 ± 0.05 eV) 和低载流子迁移率 (10 − 8 cm 2 V − 1 s − 1 )导致高串联电阻。通过脉冲激光沉积生长的更薄的 PTO 层获得了更好的结果,PCE 值高达 0.6%。通过用 BaTiO 3 (BTO) 代替 PTO 获得了进一步的增强,PCE 值达到约 0。
更新日期:2017-12-01
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