Structural characterizations of two ITO ceramics that were respectively sintered at 1560 °C and 1600 °C were focused on and the results indicate that the lower sintering temperature is good for ITO ceramics to have the triangle fine grains, larger elemental concentration gradients of indium and tin and more content of In₄Sn₃O₁₂ phase which displays the stronger grain orientation growth along the crystallographic direction of [0-11]. ITO films with 100 nm thickness deposited at 25 °C–230 °C were used to investigate the effect of micro-structure on the film properties. Grain orientation growth of In₄Sn₃O₁₂ phase is conductive to form ITO films of columnar structure. Otherwise, uniform micro-structure and higher solubility of SnO₂ in In₂O₃ main phase contribute to deposit ITO films of higher sheet resistance, less thickness uniformity and higher transmittance at 25 °C, smaller etching angle and lower etching rate at 230 °C.

重点研究了两种分别在1560°C和1600°C烧结的ITO陶瓷的结构表征，结果表明较低的烧结温度有利于ITO陶瓷具有三角形的细晶粒，较大的铟和锡元素浓度梯度In ₄ Sn ₃ O ₁₂相的含量更高，沿[0-11]晶体学方向显示出更强的晶粒取向生长。在25°C–230°C下沉积的厚度为100 nm的ITO膜用于研究微观结构对膜性能的影响。In ₄ Sn ₃ O _12的晶粒取向生长相导电形成柱状结构的ITO膜。否则，均匀的微观结构和较高的SnO ₂在In ₂ O ₃主相中的溶解度有助于沉积ITO膜，该ITO膜具有较高的薄层电阻，较小的厚度均匀性和25°C的较高透射率，较小的蚀刻角和较低的230°C的蚀刻速率C。