This study explores the unique role of Ga in amorphous (a‐) InGaO oxide semiconductors through combined theory and experiment. It reveals substitutional effects that have not previously been attributed to Ga, and that are investigated by examining how Ga influences structure–property relationships in a series of pulsed laser deposited a‐InGaO thin films. Element‐specific structural studies (X‐ray absorption and anomalous scattering) show good agreement with the results of ab initio molecular dynamics simulations. This structural knowledge is used to understand the results of air‐annealing and Hall effect electrical measurements. The crystallization temperature of a‐IO is shown to increase by as much as 325 °C on substituting Ga for In. This increased thermal stability is understood on the basis of the large changes in local structure that Ga undergoes, as compared to In, during crystallization. Hall measurements reveal an initial sharp drop in both carrier concentration and mobility with increasing Ga incorporation, which moderates at >20 at% Ga content. This decline in both the carrier concentration and mobility with increasing Ga is attributed to dilution of the charge‐carrying InO matrix and to increased structural disorder. The latter effect saturates at high at% Ga.

中文翻译：

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通过结构-性质关系探究镓在非晶氧化物半导体中的独特作用

本研究探讨在无定形的（A-）在Ga中的独特作用镓 O类氧化物半导体通过结合理论和实验。它表明，以前没有被归因于Ga和被调查通过检查嘎如何影响在一系列脉冲激光器的结构-性能关系的沉积，在替代效应嘎O薄膜。特定于元素的结构研究（X射线吸收和反常散射）表明与从头算分子动力学模拟的结果吻合良好。该结构知识用于了解空气退火和霍尔效应电测量的结果。用Ga代替In后，aIO的结晶温度升高了325°C。基于在结晶期间Ga与In相比经历的局部结构的大变化，可以理解这种增加的热稳定性。霍尔测量结果表明，随着Ga掺入量的增加，载流子浓度和迁移率均出现了急剧下降，在> 20 at％的Ga含量时有所下降。O基质会增加结构紊乱。后一种效应在高％Ga时达到饱和。