The carrier concentration and effective mass of mesoporous SrTiO₃ films were controlled by the substitution of Ti with V-group elements (V, Nb, and Ta) to enhance the thermoelectric properties. We calculated the effect of the substitution on the effective mass of SrTiO₃ by analyzing its structural and electrical properties. When V was used as a substitute, the effective mass increased slightly due to a small change in the VO bond distance. Moreover, when Nb and Ta were used as substitutes, the effective mass increased owing to an increase in the electronic density of states near the fermi level due to the increased bond length of Nb(or Ta)O. Consequently, the use of Nb and Ta as substitutes in the SrTiO₃ film induced an increase in the figure of merit value, which was due to increases in both the effective mass and carrier concentration.

通过用V族元素（V，Nb和Ta）取代Ti来控制介孔SrTiO ₃薄膜的载流子浓度和有效质量，以增强热电性能。我们通过分析SrTiO ₃的结构和电性能，计算了其对SrTiO ₃有效质量的影响。当V用作替代品时，由于V O键距的微小变化，有效质量略有增加。此外，当使用Nb和Ta替代时，由于Nb（或Ta）O的键长增加，有效质量增加是由于费米能级附近的态的电子密度增加。 Ta作为SrTiO _3的替代物 由于有效质量和载流子浓度的增加，薄膜引起了品质因数值的增加。