The relaxor ferroelectric Pb_0.9La_0.1(Zr_0.52Ti_0.48)O₃ (PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, break-down field strengths and energy storage performances were investigated as a function of the buffer layer and electrode. A large recoverable energy-storage density (U_reco) of 23.2 J/cm³ and high energy-storage efficiency (η) of 91.6% obtained in the epitaxial PLZT film grown on SrRuO₃/SrTiO₃/Si are much higher than those in the textured PLZT film (U_reco = 21.9 J/cm³, η = 87.8%) on SrRuO₃/Ca₂Nb₃O₁₀-nanosheet/Si and the polycrystalline PLZT film (U_reco = 17.6 J/cm³, η = 82.6%) on Pt/Ti/SiO₂/Si, under the same condition of 1500 kV/cm and 1 kHz, due to the slim polarization loop and significant antiferroelectric-like behavior. Owing to the high break-down strength (BDS) of 2500 kV/cm, a giant U_reco value of 40.2 J/cm³ was obtained for the epitaxial PLZT film, in which U_reco values of 28.4 J/cm³ (at BDS of 2000 kV/cm) and 20.2 J/cm³ (at BDS of 1700 kV/cm), respectively, were obtained in the textured and polycrystalline PLZT films. The excellent fatigue-free properties and high thermal stability were also observed in these films.

使用脉冲激光沉积技术沉积弛豫铁电Pb _0.9 La _0.1（Zr _0.52 Ti _0.48）O ₃（PLZT）薄膜，并研究了它们的微观结构，击穿场强和能量存储性能随缓冲层和电极。在SrRuO ₃ / SrTiO ₃ / Si上生长的外延PLZT薄膜上获得的23.2 J / cm ³的大可回收储能密度（U _reco）和91.6％的高储能效率（η）远高于储能效率。带纹理的PLZT膜（U _reco  = 21.9 J / cm ³ 在SrRuO ₃ / Ca ₂ Nb ₃ O _10-纳米片/ Si上，η = 87.8％）和 在Pt / Ti / SiO ₂ / Si上的多晶PLZT膜（U _reco  = 17.6 J / cm ³，η = 82.6％），在1500 kV / cm和1 kHz的相同条件下，归因于纤细的极化环路和明显的反铁电特性。由于2500 kV / cm的高击穿强度（BDS），外延PLZT膜的U _reco值为40.2 J / cm ³，其中U _reco值为28.4 J / cm ³（在BDS时） 2000 kV / cm）和20.2 J / cm在带纹理的PLZT和多晶PLZT膜中分别获得³（BDS为1700 kV / cm）。在这些膜中还观察到优异的无疲劳性能和高热稳定性。