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Highly Stable Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors on Deformable Softening Polymer Substrates
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2017-08-22 , DOI: 10.1002/aelm.201700221
Gerardo Gutierrez‐Heredia 1 , Ovidio Rodriguez‐Lopez 1 , Aldo Garcia‐Sandoval 2 , Walter E. Voit 1, 2, 3
Affiliation  

Flexible electronics are attracting great interest in healthcare, where devices such as thin‐film transistors (TFTs) on polymer substrates facilitate biomedical applications requiring complex circuits in soft packages. Consequently, a repeatable process to fabricate reliable, stable electronic components on flexible substrates is required. Here, thermoset thiol‐ene/acrylate shape memory polymer (SMP) substrates house indium‐gallium‐zinc‐oxide (IGZO) TFTs and logic circuits: resulting devices exhibit stable behavior after thermal annealing at 250 °C. Fabricated, annealed devices exhibit an average mobility of 15 ± 2.5 cm2 V−1 s−1 and show stability after bending and soaking in aqueous media. TFTs on SMPs are studied after mechanical bending tests with radii of curvature of 5 mm for 104 cycles over a 4 h time period. Other TFTs are soaked in phosphate‐buffered saline solution at 37 °C for 1 week. Logic inverter circuits using IGZO TFTs on SMPs represent the ability to add complex circuitry onto thin film flexible electronics. This technology can enable a new generation of implantable devices for research in healthcare fields.

中文翻译:

可变形软化聚合物衬底上的高度稳定的铟镓锌氧化物薄膜晶体管

柔性电子产品在医疗保健领域引起了极大的兴趣,其中聚合物衬底上的诸如薄膜晶体管(TFT)之类的设备促进了生物医学应用的需求,这些应用需要软包装中的复杂电路。因此,需要在柔性基板上制造可靠,稳定的电子部件的可重复工艺。在这里,热固性硫醇烯/丙烯酸酯形状记忆聚合物(SMP)基板装有铟镓锌氧化物(IGZO)TFT和逻辑电路:在250°C的温度下退火后,所得器件表现出稳定的性能。制作后的退火器件平均迁移率为15±2.5 cm 2 V -1 s -1在水介质中弯曲和浸泡后表现出稳定性。在机械弯曲测试之后,对SMP上的TFT进行了研究,其曲率半径为5 mm,在4 h的时间内进行10 4个循环。将其他TFT在37°C的磷酸盐缓冲盐溶液中浸泡1周。在SMP上使用IGZO TFT的逻辑反相器电路代表了在薄膜柔性电子产品上添加复杂电路的能力。这项技术可以实现用于医疗领域研究的新一代可植入设备。
更新日期:2017-08-22
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