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Nanoplasmonically-engineered random lasing in organic semiconductor thin films
Nanoscale Horizons ( IF 9.7 ) Pub Date : 2017-06-09 00:00:00 , DOI: 10.1039/c7nh00054e
Esmaeil Heydari 1, 2, 3, 4, 5 , Isabel Pastoriza-Santos 6, 7, 8, 9 , Luis M. Liz-Marzán 7, 9, 10, 11, 12 , Joachim Stumpe 3, 4, 5, 13, 14
Affiliation  

We demonstrate plasmonically nano-engineered coherent random lasing and stimulated emission enhancement in a hybrid gain medium of organic semiconductors doped with core–shell plasmonic nanoparticles. The gain medium is composed of a 300 ± 2 nm thin waveguide of an organic semiconductor, doped with 53 nm gold nanoparticle cores, isolated within silica shells. Upon loading the nanoparticles, the threshold of amplified spontaneous emission is reduced from 1.75 μJ cm−2 × 102 for an undoped gain medium, to 0.35 μJ cm−2 × 102 for a highly concentrated gain medium, and lasing spikes narrower than 0.1 nm are obtained. Most importantly, selection of silica shells with thicknesses of 10, 17 and 21 nm enables engineering of the plasmon–exciton energy coupling and consequently tuning of the laser slope efficiency. With this approach, the slope efficiency is increased by two times by decreasing the silica shell from 21 nm down to 10 nm, due to the enhancement of the localized electric field.

中文翻译:

纳米等离子体工程随机激光在有机半导体薄膜中的应用

我们展示了在掺有核-壳等离激元纳米粒子的有机半导体的混合增益介质中,由等离激元纳米工程设计的相干随机激射和受激发射增强。增益介质由有机半导体的300±2 nm细波导组成,掺杂有53 nm金纳米颗粒核,隔离在二氧化硅壳内。在加载纳米颗粒,放大自发发射的阈值是从1.75μJ厘米降低-2 ×10 2为未掺杂的增益介质,以0.35μJ厘米-2 ×10 2对于高浓度增益介质,可以获得窄于0.1 nm的激光尖峰。最重要的是,选择厚度为10、17和21 nm的硅胶壳可以实现等离激子-激子能量耦合的工程设计,从而可以调节激光斜率效率。通过这种方法,由于局部电场的增强,通过将二氧化硅壳层从21 nm减小到10 nm,可以将斜率效率提高两倍。
更新日期:2017-06-09
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