The unique two-dimentional structure and outstanding electronic, thermal and mechanical properties of graphene have attracted the interest of scientists and engineers from various fields. The first step in translating the excellent properties of graphene into practical applications is the preparation of large area, continuous graphene films. Chemical vapour deposition (CVD) graphene has received increasing attention because it provides access to large-area, uniform and contineous films of high quality. However, current CVD synthetic techniques utilize metal substrates (Cu or Ni) to catalyse the growth of graphene and post-growth transfer of the graphene film to a substrate of interest is critical for most applications such as electronics, photonics and spintronics. Here we discuss recent advances in the transfer of as-grown CVD graphene to target substrates. The methods that afford CVD graphene on a target substrate are summarized under three categories: transfer with a support layer, transfer without a support layer and direct growth on target substrates. At present the first two groups dominate the field and research efforts are directed towards refining the choice of the support layer. The support layer plays a vital role in the transfer process because it has a direct contact with the atomic thick graphene surface, affecting its properties and determining the quality of the transferred graphene.

中文翻译：

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转移化学气相沉积石墨烯的研究进展

石墨烯的独特二维结构以及出色的电子，热和机械性能吸引了来自各个领域的科学家和工程师的兴趣。将石墨烯的优异性能转化为实际应用的第一步是制备大面积，连续的石墨烯薄膜。化学气相沉积（CVD）石墨烯受到越来越多的关注，因为它可以提供大面积，均匀且连续的高质量薄膜。然而，当前的CVD合成技术利用金属衬底（Cu或Ni）来催化石墨烯的生长，并且石墨烯膜向目标衬底的生长后转移对于诸如电子，光子学和自旋电子学的大多数应用是至关重要的。在这里，我们讨论将已生长的CVD石墨烯转移到目标衬底的最新进展。在目标基板上提供CVD石墨烯的方法归纳为以下三类：带支撑层的转移，无支撑层的转移以及在目标基板上直接生长的方法。目前，前两个小组在该领域占主导地位，研究工作致力于改进支持层的选择。支撑层在转移过程中起着至关重要的作用，因为它与原子厚的石墨烯表面直接接触，影响其性能并确定转移的石墨烯的质量。目前，前两个小组在该领域占主导地位，研究工作致力于改进支持层的选择。支撑层在转移过程中起着至关重要的作用，因为它与原子厚的石墨烯表面直接接触，影响其性能并确定转移的石墨烯的质量。目前，前两个小组在该领域占主导地位，研究工作致力于改进支持层的选择。支撑层在转移过程中起着至关重要的作用，因为它与原子厚的石墨烯表面直接接触，影响其性能并确定转移的石墨烯的质量。