Heavy fermion materials have recently attracted attention for their potential to combine topological protection with strongly correlated electron physics. To date, the ideas of topological protection have been restricted to the heavy fermion or ‘Kondo’ insulators with the simplest point-group symmetries. Here we argue that the presence of nonsymmorphic crystal symmetries in many heavy fermion materials opens up a new family of topologically protected heavy electron systems. Re-examination of archival resistivity measurements in the nonsymmorphic heavy fermion insulators Ce₃Bi₄Pt₃ and CeNiSn reveals the presence of a low-temperature conductivity plateau, making them candidate members of the new class of material. We illustrate our ideas with a specific model for CeNiSn, showing how glide symmetries generate surface states with a novel Möbius braiding that can be detected by ARPES or non-local conductivity measurements. One of the interesting effects of strong correlation is the development of partially localization or ‘Kondo breakdown’ on the surfaces, which transforms Möbius surface states into quasi-one-dimensional conductors, with the potential for novel electronic phase transitions.

中文翻译：

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MöbiusKondo绝缘子

重型费米子材料因其将拓扑保护与高度相关的电子物理学相结合的潜力而备受关注。迄今为止，拓扑保护的思想仅限于具有最简单点群对称性的重型费米子或“近藤”绝缘子。在这里，我们认为在许多重费米子材料中非对称晶体对称性的存在打开了拓扑保护的重电子系统的新家族。重新检验非同形重费米子绝缘子Ce ₃ Bi ₄ Pt _3中的归档电阻率测量值CeNiSn揭示了低温电导率平台的存在，使其成为新型材料的候选成员。我们使用CeNiSn的特定模型来说明我们的想法，该模型展示了滑行对称如何通过新型Möbius编织物产生表面状态的方法，该编织物可以通过ARPES或非局部电导率测量来检测。强相关性的有趣效果之一是表面上出现了局部局部化或“近藤击穿”现象，这将莫比乌斯表面态转变为准一维导体，并具有新型电子相变的潜力。