Magnetoresistance (MR), as a key property in magnetic‐field sensing and magnetic storage, has been a long‐term focus. In particular in silicon, which is the mainstream semiconductor of information technology, the MR phenomenon has attracted a lot of attention because of its fundamental interest and broad application potential. Here, a large MR in silicon, which is associated with impurity onsite Coulomb interaction and space charge limited current (SCLC), is observed at room temperature. In the presence of SCLC, delocalization of electrons in doubly occupied traps with a strong onsite Coulomb interaction leads to an S‐shape negative differential conductance (SNDC). A large room temperature MR (>10³% at 0.05 T) appears around the SNDC region. These findings will help to design high‐performance silicon‐based magnetic device (e.g., magnetic switch devices, magnetic logic devices) and pave the way for magnetoelectronics in silicon.

中文翻译：

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原位库仑相互作用在室温下诱导的硅大磁阻

磁阻（MR）作为磁场感测和磁存储的关键特性，一直是长期关注的焦点。特别是在作为信息技术的主流半导体的硅中，由于MR现象的根本意义和广泛的应用潜力，因此MR现象引起了人们的广泛关注。在室温下，硅中的大MR与杂质现场库仑相互作用和空间电荷限制电流（SCLC）有关。在存在SCLC的情况下，在具有强现场库仑相互作用的双重占据的陷阱中电子的离域导致S型负微分电导（SNDC）。室温大MR（> 10 ³SNDC区域周围出现0.05 T时的％）。这些发现将有助于设计高性能的基于硅的磁器件（例如，磁开关器件，磁逻辑器件），并为硅中的磁电子学铺平道路。