MXenes, or transition metal carbides or nitrides, as an advanced 2D materials have already attracted extensive attention due to their high conductivity and large specific surface area for applications in the field of energy storage. MXenes also have many other advanced properties such as good transmittance and adjustable work function over a large range. However, few works study the properties of MXenes in the field of optoelectronics. Here, the optoelectronic properties of Ti₃C₂T_X (with a work function of 4.37 eV) on n‐type silicon (n‐Si) of vertical van der Waals heterostructures are studied. The Ti₃C₂T_X not only functions as the transparent electrode but also contributes to the separation and transport of photo‐induced carriers. After investigations on the influence of annealing, temperature, illumination, and applied voltage on the performance of Ti₃C₂T_X/n‐Si Schottky junction heterostructures, this study fabricates a self‐driven vertical junction photodetectors with high response and recovery speeds. It is believed that the excellent photoelectric properties of MXenes will attract many researchers' attention to the application of MXenes in the photoelectrical field.

中文翻译：

---

MXene-硅Van Der Waals用于高速自驱动光电探测器的异质结构

作为先进的2D材料，MXenes或过渡金属碳化物或氮化物由于其高电导率和较大的比表面积而在能量存储领域得到了广泛的关注。MXenes还具有许多其他高级特性，例如大范围内的良好透射率和可调整的功函。但是，很少有研究研究MXene在光电子领域的特性。在这里，研究了垂直范德华异质结构的n型硅（n-Si）上的Ti ₃ C ₂ T _X（功函数为4.37 eV）的光电性能。Ti ₃ C ₂ T _X不仅充当透明电极，而且还有助于光致载流子的分离和传输。在研究了退火，温度，光照和施加电压对Ti ₃ C ₂ T _X / n-Si肖特基结异质结构性能的影响之后，本研究制造了具有高响应和恢复速度的自驱动垂直结光电探测器。据信，MXene的优异的光电性能将引起许多研究者对MXene在光电领域中的应用的关注。