One of the main challenges to achieve high‐performance bottom‐contact transistors involves the organic/electrodes contacts. This study provides a simple approach to address the contact issue by incorporating an inducing layer prior to the organic semiconductor deposition. The molecules of the inducing layer nucleate into lamellar grains from the edge to the channel, resulting in a good morphological contact to the bottom electrodes. The following active layer maintains nearly layer‐by‐layer growth mode and yields uniformed terraced‐like films both on the electrode edges and in the channels. With the inducing layer, pentacene thin‐film bottom‐contact transistors are obtained with a hole mobility exceeding 1 cm² V⁻¹ s⁻¹.

中文翻译：

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通过改善横向接触实现高性能的底部接触有机薄膜晶体管

实现高性能底部接触晶体管的主要挑战之一是有机/电极接触。这项研究提供了一种简单的方法，通过在有机半导体沉积之前加入感应层来解决接触问题。诱导层的分子从边缘到通道成核为层状晶粒，从而与底部电极形成良好的形态接触。接下来的活性层保持几乎逐层的生长模式，并在电极边缘和通道中产生均匀的梯状膜。通过该感应层，可以得到空穴迁移率超过1 cm ² V ^-1 s ^-1的并五苯薄膜底部接触晶体管。