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Relation between Interfacial Band‐Bending and Electronic Properties in Organic Semiconductor Pentacene
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2017-07-11 , DOI: 10.1002/aelm.201700136
Panlong Zhang 1, 2 , Shuai Zhao 3 , Haibo Wang 1 , Jidong Zhang 1 , Jianwu Shi 3 , Hua Wang 3 , Donghang Yan 1
Affiliation  

There is still a challenge in organic electronics to effectively tailor interfacial electronic structures for achieving desired electronic properties for optoelectronic devices. This study realizes the tuning of interfacial electronic structures in organic semiconductor pentacene by employing substrates with different work functions. Pentacene layers show downward band‐bending with a low work function, flat band with a middle work function, and upward band‐bending with a high work function. The formation of band‐bending is explained by the electrostatic potential according to the Fermi level position. Different interfacial electronic structures can influence the carrier transport across the interface. Their diodes show different rectifying behaviors due to band‐bending, and ohmic transport is observed for the flat band structure. This work is a promising exploration to realize desired functions of semiconductor devices by tailoring interfacial electronic structures.

中文翻译:

并五苯中界面能带弯曲与电子性能的关系

有机电子学中仍然存在挑战,以有效地定制界面电子结构以实现光电子器件的所需电子性能。这项研究通过使用具有不同功函数的衬底实现了有机半导体并五苯中界面电子结构的调谐。并五苯层显示出较低的功函数向下弯曲,具有中等功函数的平坦带,以及较高的功函数向上弯曲。带弯曲的形成是根据费米能级位置的静电势来解释的。不同的界面电子结构可以影响跨界面的载流子传输。由于带弯曲,它们的二极管显示出不同的整流行为,并且在平坦带结构中观察到了欧姆传输。
更新日期:2017-07-11
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