Light‐tunable resistive switching (RS) characteristics are demonstrated in a photochromophore (BMThCE)‐based resistive random access memory. Triggered by nondestructive ultraviolet or visible light irradiation, two memory‐type RS characteristics can be reversibly modulated in the same device upon a narrow range of applied voltage (<6 V), accompanied by the photochromophores in the active layer reversibly changed between ring‐open state (namely, o‐BMThCE) and ring‐closed state (namely, c‐BMThCE). The o‐BMThCE‐based memory exhibits a write‐once‐read‐many characteristic with a high current on/off ratio of 10⁵, while the c‐BMThCE‐based one shows a flash characteristic. Both of the RS characteristics present good nonvolatile stability with the resistance states maintained over 10⁴ s without variation. This RS modulation is possibly related to the formation and rupture of conductive filaments, which formed along channels consisting of BMThCE trapping molecules. This work provides a new memory element for the design of light‐controllable high density storage and data encryption technology.

中文翻译：

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光致变色RRAM中的可调光非易失性存储器特性

在基于光致发色团（BMThCE）的电阻随机存取存储器中展示了光可调电阻开关（RS）特性。通过无损紫外线或可见光照射触发，可以在狭窄的施加电压（<6 V）范围内在同一设备中可逆地调节两个记忆型RS特性，并伴随着有源层中的光致变色团在开环之间可逆地变化状态（即o -BMThCE）和闭环状态（即c- BMThCE）。基于o BMThCE的存储器具有一次写入多次读取的特性，其高电流开/关比为10 ⁵，而c基于BMThCE的闪存具有闪烁特性。这两个RS特性均表现出良好的非易失性稳定性，其电阻状态保持了10 ⁴ s以上且没有变化。这种RS调制可能与沿着由BMThCE捕获分子组成的通道形成的导电丝的形成和破裂有关。这项工作为光控高密度存储和数据加密技术的设计提供了新的存储元素。