A novel organic transistor‐based sensor for direct X‐ray detection is proposed. The device operates at low voltages (≤3 V) and is entirely fabricated on flexible, plastic substrates with techniques that can be easily upscaled to an industrial scale. It is claimed that flexible, low voltage organic transistors have never been employed as direct ionizing radiation detectors, as two terminal photodetectors are typically considered for this application. It is demonstrated that, differently from two‐terminal photodetectors, X‐ray detection ability of the proposed sensor can be tuned acting on the transistor polarization conditions. Thanks to such a peculiar feature of the device, outstanding values of sensitivity are observed (up to 1200 nC Gy⁻¹), much larger than the ones reported for two terminal direct organic photodetectors. It is notable that, the reported performances have been obtained using as sensing layer a standard, commercially available organic semiconductor: a complete explanation of the mechanism behind the detection ability is thoroughly discussed. The device functionality is perfectly maintained even after the exposure to high X‐ray doses (160 Gy), thus demonstrating the significant radiation hardness of the detector.

中文翻译：

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基于低压有机场效应晶体管的高灵敏度直接X射线探测器

提出了一种新颖的基于有机晶体管的直接X射线检测传感器。该设备在低电压（≤3V）下工作，并采用可轻松升级至工业规模的技术完全在柔性塑料基板上制造。要求保护的是，从未将柔性低压有机晶体管用作直接电离辐射探测器，因为在这种应用中通常考虑使用两个终端光电探测器。结果表明，与两端光电探测器不同，所提出的传感器的X射线探测能力可以根据晶体管的极化条件进行调整。由于该设备的独特功能，观察到了出色的灵敏度值（高达1200 nC Gy ^-1），比报道的两个终端直接有机光电探测器要大得多。值得注意的是，所报告的性能已使用标准的可商购有机半导体作为传感层获得：全面讨论了检测能力背后的机理的完整解释。即使在暴露于高剂量的X射线（160 Gy）之后，设备的功能也可以得到很好的维护，从而证明了检测器具有显着的辐射硬度。