Lead halide perovskite semiconductors are in general known to have an inherently high X-ray absorption cross-section and a significantly higher carrier mobility than any other low-temperature solution-processed semiconductor. So far, the processing of several-hundred-micrometres-thick high-quality crystalline perovskite films over a large area has been unresolved for efficient X-ray detection. In this Article, we present a mechanical sintering process to fabricate polycrystalline methyl ammonium lead triiodide perovskite (MAPbI₃) wafers with millimetre thickness and well-defined crystallinity. Benchmarking of the MAPbI₃ wafers against state-of-the-art CdTe detectors reveals competitive conversion efficiencies of 2,527 µC Gy_air⁻¹ cm⁻² under 70 kV_p X-ray exposure. The high ambipolar mobility–lifetime product of 2 × 10⁻⁴ cm² V⁻¹ is suggested to be responsible for this exceptionally high sensitivity. Our findings inform a new generation of highly efficient and low-cost X-ray detectors based on perovskite wafers.

众所周知，与任何其他低温溶液处理的半导体相比，卤化钙钛矿半导体具有固有的高X射线吸收横截面和显着更高的载流子迁移率。迄今为止，对于有效的X射线检测，尚未解决大面积上数百微米厚的高质量结晶钙钛矿薄膜的处理。在本文中，我们介绍了一种机械烧结工艺，以制造具有毫米厚度和明确定义的结晶度的多晶甲基铵三碘化铅钙钛矿（MAPbI ₃）晶片。使用最新的CdTe检测器对MAPbI ₃晶圆进行基准测试，发现具有2,527 µC Gy_空气^-1  cm ^-2的竞争转换效率在70 kV _p X射线照射下。高双极性迁移率–终生乘积2×10 ^-4  cm ²  V ^-1被认为是造成这种异常高灵敏度的原因。我们的发现为基于钙钛矿晶片的新一代高效，低成本X射线探测器提供了信息。