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Hot Charge Carrier Transmission from Plasmonic Nanostructures
Annual Review of Physical Chemistry ( IF 14.7 ) Pub Date : 2017-05-02 00:00:00 , DOI: 10.1146/annurev-physchem-052516-044948
Phillip Christopher 1 , Martin Moskovits 2
Affiliation  

Surface plasmons have recently been harnessed to carry out processes such as photovoltaic current generation, redox photochemistry, photocatalysis, and photodetection, all of which are enabled by separating energetic (hot) electrons and holes—processes that, previously, were the domain of semiconductor junctions. Currently, the power conversion efficiencies of systems using plasmon excitation are low. However, the very large electron/hole per photon quantum efficiencies observed for plasmonic devices fan the hope of future improvements through a deeper understanding of the processes involved and through better device engineering, especially of critical interfaces such as those between metallic and semiconducting nanophases (or adsorbed molecules). In this review, we focus on the physics and dynamics governing plasmon-derived hot charge carrier transfer across, and the electronic structure at, metal–semiconductor (molecule) interfaces, where we feel the barriers contributing to low efficiencies reside. We suggest some areas of opportunity that deserve early attention in the still-evolving field of hot carrier transmission from plasmonic nanostructures to neighboring phases.

中文翻译:


等离子纳米结构的热电荷载流子传输

表面等离激元最近已被利用来执行诸如光伏电流产生,氧化还原光化学,光催化和光检测等过程,所有这些过程都是通过分离高能(热)电子和空穴来实现的,这些过程以前是半导体结的领域。当前,使用等离子体激元激发的系统的功率转换效率低。但是,对于等离子体激元器件观察到的非常大的电子/空穴每光子量子效率,通过更深入地了解所涉及的过程以及更好的器件工程,尤其是诸如金属和半导体纳米相之间的关键界面(或吸附的分子)。在这篇评论中,我们专注于控制源自等离激元的热电荷载流子跨过的物理和动力学,以及控制金属-半导体(分子)界面处的电子结构的地方,在该处我们感觉到存在影响低效率的障碍。我们建议在仍在不断发展的热载流子从等离激元纳米结构到相邻相的不断发展的领域中,一些机会领域应引起早期关注。

更新日期:2017-05-02
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