We report the first photopatternable, nonvolatile memory consisting of high-temperature polyimide (PI), poly(hexafluoroisopropylidenediphthalimide-4-cinnamoyloxytri-phenylamine) (6F-HTPA-CI), and we demonstrate the successful fabrication and programmable operation of ‘write-read-erase’ memory devices based on nanoscale thin films of 6F-HTPA-CI. The PI thin film enables scalable fine patternability, providing lines and spaces with excellent pattern fidelity. Isolated individual memory devices were successfully fabricated on a bottom electrode via a sequential process of coating, photopatterning, top electrode deposition, developing, rinsing and drying. The 6F-HTPA-CI cells exhibited excellent nonvolatile memory performances in three different modes (unipolar permanent, unipolar flash and bipolar flash memories), regardless of photo-exposure doses. The switching-ON (writing) voltage was in the range of ±1.5 to ±2.0 V, and the switching-OFF (erasing) voltage was in the range of ±0.3 to ±0.8 V; these voltages are quite low, indicating that power consumption by the devices during operation is low. The ON/OFF current ratio of the devices was in the range of 10⁴–10⁹. Overall, the photopatternable PI 6F-HTPA-CI opens up the possibility of low-cost mass production of high-performance, high-speed, energy-efficient, permanent or rewritable high-density nonvolatile polymer memory devices suitable for future advanced electronics in highly integrated systems.

我们报道了由高温聚酰亚胺（PI），聚（六氟异丙基二苯二甲酰亚胺-4-肉桂酰氧基三苯胺）（6F-HTPA-CI）组成的第一个可光图案化的非易失性存储器，并且演示了“读写”的成功制造和可编程操作-擦除设备基于6F-HTPA-CI纳米薄膜。PI薄膜可实现可扩展的精细图案化，从而为线条和空间提供出色的图案保真度。通过涂覆，光图案化，顶部电极沉积，显影，漂洗和干燥的顺序过程，成功地在底部电极上制造了隔离的单个存储器件。6F-HTPA-CI电池在三种不同模式（单极永久性，单极闪存和双极闪存）下均具有出色的非易失性存储性能，而与曝光剂量无关。接通（写入）电压在±1.5至±2.0 V的范围内，断开（擦除）电压在±0.3至±0.8 V的范围内；这些电压非常低，表明设备在运行期间的功耗很低。设备的开/关电流比在10的范围内^{4 –} 10 ⁹。总体而言，可光图案化的PI 6F-HTPA-CI为高性能，高速，节能，永久或可重写的高密度非易失性聚合物存储设备的低成本批量生产提供了可能性，适用于高度集成的未来先进电子产品集成系统。